The alternative algorithm for the determination of threshold voltages on N-channel Fin-FET devices

FINFET devices have generated an alternative convincing next-generation foundation in IC industry. The outrageously leaky I_off current gets controlled as the channel length is imperatively shortened down to 40nm and below. Somehow, the 3-dimensional fin structure makes itself distinct from the traditional MOSFET transistors, e.g., the threshold voltages (Vt). In some channel lengths, Vt may turn to be negative on NFINFET, while it may turn to be positive on PFINFET. It is intriguing to use or propose another reliable way to determine threshold voltages. In this study, a reliable and direct way is proposed using modeled current-voltage characteristic curves to fit measured ones. After fitting, some other physical quantities can be simultaneously determined giving persuasive understanding on the devices.