An alternative algorithm to demonstrate electrical characteristics of N/P-channel Fin-FET devices

FINFET devices have demonstrated convincing low leaky I_off current for the last decade and continue to take the leading role approaching to 10nm channel length. The imperative must for the next generation MOSFET transistors with 3-dimensional fin structure overwhelmingly replace the traditional MOSFET ones. However, the threshold voltages (Vt), in some cases, may turn out to be negative on NFINFET devices, while, on the other hand, positive on PFINFET devices. A new algorithm is proposed to exactly characterize some specific physical quantities and thus is used to compare the differences between N-channel and P-channel transistors. In this paper, a modified formula concerning current-voltage characteristic curves is used to fit the measured data. One can then simultaneously determine several physical quantities by way of this fitting.