Title :
pn+ junction in an implanted electroactive polymer: poly(paraphenylene)
Author :
Moliton, A. ; Ratier, B. ; Froyer, G.
Author_Institution :
Lepofi ver des Scis., Limoges
fDate :
3/31/1988 12:00:00 AM
Abstract :
The authors have recently shown that specific and stable n or p doping may be obtained on poly(paraphenylene), providing moderate implantation conditions with appropriate ions are used. Here they describe a pn+-junction made in intrinsic insulating poly(paraphenylene) (α<10-12 Ω-1 cm-1) by implantation (E≃50 keV) of alkali metal ions (essentially caesium for n doping) and halogen (iodine for p doping)
Keywords :
amorphous semiconductors; ion implantation; p-n junctions; polymers; semiconductor doping; 50 keV; PPP; alkali metal ions; halogen ions; implanted electroactive polymer; ion implantation; n doping; p doping; pn+ junction; polyparaphenylene;
Journal_Title :
Electronics Letters
