• DocumentCode
    1422718
  • Title

    pn+ junction in an implanted electroactive polymer: poly(paraphenylene)

  • Author

    Moliton, A. ; Ratier, B. ; Froyer, G.

  • Author_Institution
    Lepofi ver des Scis., Limoges
  • Volume
    24
  • Issue
    7
  • fYear
    1988
  • fDate
    3/31/1988 12:00:00 AM
  • Firstpage
    383
  • Lastpage
    385
  • Abstract
    The authors have recently shown that specific and stable n or p doping may be obtained on poly(paraphenylene), providing moderate implantation conditions with appropriate ions are used. Here they describe a pn+-junction made in intrinsic insulating poly(paraphenylene) (α<10-12 Ω-1 cm-1) by implantation (E≃50 keV) of alkali metal ions (essentially caesium for n doping) and halogen (iodine for p doping)
  • Keywords
    amorphous semiconductors; ion implantation; p-n junctions; polymers; semiconductor doping; 50 keV; PPP; alkali metal ions; halogen ions; implanted electroactive polymer; ion implantation; n doping; p doping; pn+ junction; polyparaphenylene;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1422718