A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector

Author

Yue-Fei Yang ; Hsu, Chung-Chi ; Yang, Edward S. ; Ou, Hai-Jiang

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

17

Issue

11

fYear

1996

Firstpage

531

Lastpage

533

Abstract

A C-doped GaInP/GaAs HBT using a selective buried sub-collector has been fabricated by two growth steps. The device was fabricated with minimum overlap of the extrinsic base and the sub-collector region to reduce base-collector capacitance. The experiment shows that the base collector capacitance is reduced to about half of that of an HBT without selective buried sub-collector while the base resistance remains unchanged. A current gain of 35, f/sub T/ of 50 GHz and f/sub max/ of 140 GHz are obtained with this technology.

Keywords

III-V semiconductors; capacitance; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; 140 GHz; 50 GHz; GaInP-GaAs; base-collector capacitance; current gain; extrinsic base; heterojunction bipolar transistor; minimum overlap; selective buried sub-collector; Bipolar transistors; Capacitance; Degradation; Epitaxial growth; Etching; Gallium arsenide; Heterojunction bipolar transistors; Ohmic contacts; Radio frequency; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.541771

Filename

541771