Title :
High-performance submicrometer gatelength GaInAs/InP composite channel HEMT´s with regrown ohmic contacts
Author :
Shealy, J.B. ; Matloubian, M. ; Liu, T.Y. ; Thompson, M.A. ; Hashemi, M.M. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
This letter reports DC and RF performance of 0.25 μm gatelength GaInAs/InP composite channel HEMT´s with nonalloyed, regrown ohmic contacts by MOCVD. Regrown channel contacts are used to achieve low contact resistance (0.35 /spl Omega/-mm) to (50 /spl Aring/) GaInAs/(150 /spl Aring/) InP composite channel HEMT´s. High transconductance (600 mS/mm), high full channel current (650 mA/mm), and high peak cut-off frequencies (FT=70 GHz, Fmax=170 GHz) are observed. Contact transfer resistance of regrown channel contacts is compared to conventional alloyed contacts for varying GaInAs/InP channel composition.
Keywords :
CVD coatings; III-V semiconductors; contact resistance; gallium arsenide; high electron mobility transistors; indium compounds; ohmic contacts; 0.25 micron; DC performance; GaInAs-InP; MOCVD; RF performance; channel current; contact transfer resistance; cut-off frequency; nonalloyed regrown ohmic contact; submicrometer gatelength GaInAs/InP composite channel HEMT; transconductance; Charge measurement; Contact resistance; Current measurement; Electrons; Etching; HEMTs; Indium phosphide; MOCVD; Ohmic contacts; Surface morphology;
Journal_Title :
Electron Device Letters, IEEE
