High-performance submicrometer gatelength GaInAs/InP composite channel HEMT´s with regrown ohmic contacts

Author

Shealy, J.B. ; Matloubian, M. ; Liu, T.Y. ; Thompson, M.A. ; Hashemi, M.M. ; DenBaars, S.P. ; Mishra, U.K.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

Volume

17

Issue

11

fYear

1996

Firstpage

540

Lastpage

542

Abstract

This letter reports DC and RF performance of 0.25 μm gatelength GaInAs/InP composite channel HEMT´s with nonalloyed, regrown ohmic contacts by MOCVD. Regrown channel contacts are used to achieve low contact resistance (0.35 /spl Omega/-mm) to (50 /spl Aring/) GaInAs/(150 /spl Aring/) InP composite channel HEMT´s. High transconductance (600 mS/mm), high full channel current (650 mA/mm), and high peak cut-off frequencies (F_T=70 GHz, F_max=170 GHz) are observed. Contact transfer resistance of regrown channel contacts is compared to conventional alloyed contacts for varying GaInAs/InP channel composition.

Keywords

CVD coatings; III-V semiconductors; contact resistance; gallium arsenide; high electron mobility transistors; indium compounds; ohmic contacts; 0.25 micron; DC performance; GaInAs-InP; MOCVD; RF performance; channel current; contact transfer resistance; cut-off frequency; nonalloyed regrown ohmic contact; submicrometer gatelength GaInAs/InP composite channel HEMT; transconductance; Charge measurement; Contact resistance; Current measurement; Electrons; Etching; HEMTs; Indium phosphide; MOCVD; Ohmic contacts; Surface morphology;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.541774

Filename

541774