Highly sensitive 2 Gb/s optoreceiver with CMOS compatible avalanche photodiode

Author

Brandl, Paul ; Gaberl, Wolfgang ; Enne, Reinhard ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst

Author_Institution

Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria

fYear

2014

fDate

9-9 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

A highly sensitive optoelectronic receiver circuit is formed by combining a 100 μm diameter avalanche photodiode with an integrated transimpedance amplifier (TIA). Both main components are fabricated in a 0.35 μm standard silicon technology. The highly efficient avalanche photodiode which bases on a modified pin structure with a large detection volume is operated at 30 V reverse bias to obtain avalanche amplification. Bit error rate (BER) measurements using a 680 nm laser source modulated with a pseudorandom bit sequence (PRBS) of 2³¹-1 indicate a sensitivity of -31.8 dBm for a BER of 10^-9 at 2 Gb/s.

Keywords

CMOS integrated circuits; avalanche photodiodes; error statistics; integrated optoelectronics; operational amplifiers; optical receivers; BER measurements; PRBS; TIA; avalanche amplification; avalanche photodiode; bit error rate measurements; bit rate 2 Gbit/s; highly sensitive optoelectronic receiver circuit; integrated transimpedance amplifier; modified pin structure; pseudorandom bit sequence; size 0.35 mum; voltage 30 V; wavelength 680 nm; CMOS integrated circuits; Noise; Optical attenuators; Optical receivers; Optical sensors; Sensitivity; Optoelectronics Avalanche photodiode; optical communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (Austrochip), 22nd Austrian Workshop on

Conference_Location

Graz

Print_ISBN

978-1-4799-7243-2

Type

conf

DOI

10.1109/Austrochip.2014.6946309

Filename

6946309