Characterisation of electromagnetic compatibility drifts of nanoscale integrated circuit after accelerated life tests

Author

Ben Dhia, S. ; Boyer, A. ; Li, Bing ; Cisse Ndoye, A.

Author_Institution

Dept. of Electron., INSA de Toulouse, Toulouse, France

Volume

46

Issue

4

fYear

2010

Firstpage

278

Lastpage

280

Abstract

Presented is an original study about the effects of integrated circuit aging on electromagnetic emission and immunity to radio frequency interferences. For the first time an electromagnetic compatibility (EMC) qualification procedure is proposed to quantify the EMC level variation over the full lifetime of a component. Results presented show non-negligible variations of the emission and immunity thresholds after accelerated life tests, which could seriously deteriorate EMC margins required to ensure compliance with standard EMC levels.

Keywords

CMOS integrated circuits; electromagnetic compatibility; immunity testing; integrated circuit testing; life testing; low-power electronics; nanoelectronics; radiofrequency interference; EMC drifts; EMC level variation; EMC margins; accelerated life tests; complementary metal-oxide-semiconductor; electromagnetic compatibility qualification procedure; electromagnetic emission threshold; integrated circuit aging effects; low power CMOS technology test chip; nanoscale integrated circuit; radiofrequency interference immunity threshold; standard EMC level compliance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2010.2885

Filename

5418553