• DocumentCode
    1422927
  • Title

    High performance intermixed p-doped quantum dot superluminescent diodes at 1.2 μm

  • Author

    Jiang, Qimeng ; Zhang, Zhenhua Yu ; Hopkinson, Mark ; Hogg, R.A.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
  • Volume
    46
  • Issue
    4
  • fYear
    2010
  • Firstpage
    295
  • Lastpage
    296
  • Abstract
    A 1.2 μm high power and broadband quantum dot superluminescent diode has been successfully realised by post-growth annealing process on a p-doped InAs/InGaAs dot in well structure. The device exhibits a high output power of above 190 mW with ~80 nm bandwidth.
  • Keywords
    III-V semiconductors; annealing; gallium arsenide; indium compounds; semiconductor doping; semiconductor quantum dots; superluminescent diodes; InAs-InGaAs; high power diode; intermixed p-doped quantum dot diodes; post-growth annealing; superluminescent diodes; wavelength 1.2 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.3550
  • Filename
    5418563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1422927