Title :
High performance intermixed p-doped quantum dot superluminescent diodes at 1.2 μm
Author :
Jiang, Qimeng ; Zhang, Zhenhua Yu ; Hopkinson, Mark ; Hogg, R.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
A 1.2 μm high power and broadband quantum dot superluminescent diode has been successfully realised by post-growth annealing process on a p-doped InAs/InGaAs dot in well structure. The device exhibits a high output power of above 190 mW with ~80 nm bandwidth.
Keywords :
III-V semiconductors; annealing; gallium arsenide; indium compounds; semiconductor doping; semiconductor quantum dots; superluminescent diodes; InAs-InGaAs; high power diode; intermixed p-doped quantum dot diodes; post-growth annealing; superluminescent diodes; wavelength 1.2 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3550
