Title :
AlGaN/GaN HEMT on (111) single crystalline diamond
Author :
Alomari, Mohammad ; Dussaigne, A. ; Martin, Daniel ; Grandjean, Nicolas ; Gaquiere, Christopher ; Kohn, Erhard
Author_Institution :
Inst. of Electron Devices & Circuits (EBS), Univ. of Ulm, Ulm, Germany
Abstract :
AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 ?? 1013 cm-2 channel sheet charge density and 731 cm2/Vs mobility. 0.2 ??m gate length devices showed 0.73 A/mm maximum drain current density and fT and fmax cutoff frequencies of 21 and 42 GHz.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; semiconductor heterojunctions; wide band gap semiconductors; (111) oriented single crystalline diamond; AlGaN-GaN; C; HEMT; channel sheet charge density; cutoff frequency; frequency 21 GHz; frequency 42 GHz; gate length; high electron mobility transistors; maximum drain current density; size 0.2 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2937
