• DocumentCode
    1422948
  • Title

    AlGaN/GaN HEMT on (111) single crystalline diamond

  • Author

    Alomari, Mohammad ; Dussaigne, A. ; Martin, Daniel ; Grandjean, Nicolas ; Gaquiere, Christopher ; Kohn, Erhard

  • Author_Institution
    Inst. of Electron Devices & Circuits (EBS), Univ. of Ulm, Ulm, Germany
  • Volume
    46
  • Issue
    4
  • fYear
    2010
  • Firstpage
    299
  • Lastpage
    301
  • Abstract
    AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 ?? 1013 cm-2 channel sheet charge density and 731 cm2/Vs mobility. 0.2 ??m gate length devices showed 0.73 A/mm maximum drain current density and fT and fmax cutoff frequencies of 21 and 42 GHz.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; semiconductor heterojunctions; wide band gap semiconductors; (111) oriented single crystalline diamond; AlGaN-GaN; C; HEMT; channel sheet charge density; cutoff frequency; frequency 21 GHz; frequency 42 GHz; gate length; high electron mobility transistors; maximum drain current density; size 0.2 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.2937
  • Filename
    5418566
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1422948