Title :
High-speed optoelectronic VLSI switching chip with >4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS
Author :
Lentine, Anthony L. ; Goossen, Keith W. ; Walker, J.A. ; Chirovsky, Leo M F ; Asaro, L. Arthur D ; Hui, S.P. ; Tseng, B.J. ; Leibenguth, E. ; Cunningham, J.E. ; Jan, W.Y. ; Kuo, Jen-Ming ; Dahringer, D.W. ; Kossives, D.P. ; Bacon, D.D. ; Livescu, Gabriela
Author_Institution :
Bell Lab., Lucent Technol., Naperville, IL, USA
fDate :
4/1/1996 12:00:00 AM
Abstract :
We present the first high-speed optoelectronic very large scale integrated circuit (VLSI) switching chip using III-V optical modulators and detectors flip-chip bonded to silicon CMOS. The circuit, which consists of an array of 16×1 switching nodes, has 4096 optical detectors and 256 optical modulators and over 140K transistors. All but two of the 4352 multiple-quantum-well diodes generate photocurrent in response to light. Switching nodes have been tested at data rates above 400 Mb/s per channel, the delay variation across the chip is less than ±400 ps, and crosstalk from neighboring nodes is more than 45 dB below the desired signal. This circuit demonstrates the ability of this hybrid device technology to provide large numbers of high-speed optical I/O with complex electrical circuitry
Keywords :
CMOS integrated circuits; VLSI; flip-chip devices; integrated optoelectronics; optical switches; semiconductor quantum wells; 400 Mbit/s; III-V MQW diode; Si; crosstalk; delay; electrical circuitry; flip-chip bonding; high-speed optoelectronic VLSI switching chip; hybrid device technology; optical I/O; optical detector; optical modulator; silicon CMOS; CMOS integrated circuits; High speed integrated circuits; High speed optical techniques; Optical arrays; Optical crosstalk; Optical detectors; Optical modulation; Photonic integrated circuits; Switching circuits; Very large scale integration;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.541876
