An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs

Author

Otsuji, Taiichi ; Murata, Koichi ; Enoki, Takatomo ; Umeda, Yohtaro

Author_Institution

NTT Opt. Network Syst. Labs., Yokosuka, Japan

Volume

33

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1321

Lastpage

1327

Abstract

This paper describes the design and performance of an 80-Gbit/s 2:1 selector-type multiplexer IC fabricated with InAlAs/InGaAs/InP HEMTs. By using a double-layer interconnection process with a low-dielectric insulator, microstrip lines were designed to make impedance-matched, high-speed intercell connection of critical signal paths. The record operating data rate was measured on a 3-in wafer. In spite of the bandwidth limitation on the measurement setup, clear eye patterns were successfully observed for the first time. The obtained circuit speed improvement from the previous result of 64 Gbit/s owes much to this high-speed interconnection design

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated circuit interconnections; multiplexing equipment; optical communication equipment; optical fibre communication; photonic switching systems; 3 in; 80 Gbit/s; HEMTs; InAlAs-InGaAs-InP; bandwidth limitation; critical signal paths; double-layer interconnection process; eye patterns; high-speed intercell connection; high-speed interconnection design; low-dielectric insulator; microstrip lines; optical fibre communication systems; selector-type multiplexer IC; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Insulation; Integrated circuit interconnections; MODFETs; Microstrip; Multiplexing; Signal design;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.711330

Filename

711330