Title :
InP DHBT technology and design methodology for high-bit-rate optical communications circuits
Author :
Andre, Philippe ; Benchimol, Jean-Louis ; Desrousseaux, Patrick ; Duchenois, Anne-Marie ; Godin, Jean ; Konczykowska, Agnieszka ; Meghelli, Mounir ; Riet, Muriel ; Scavennec, Andre
Author_Institution :
France Telecom, Bagneux, France
fDate :
9/1/1998 12:00:00 AM
Abstract :
High-bit-rate optical communication links require high performance circuits. Electrical time division multiplex (ETDM) single channel bit-rate of 40 Gb/s is at hand, due to recent progress in both technology and design methodology. Multilevel modulation format can be envisaged for ETDM transmission. An InP double heterojunction bipolar transistor technology is presented in this paper. The methodology used and tools developed with optical communications in mind are also discussed. Fabricated circuits are reported: 40 Gb/s multiplexer and demultiplexer, a 20 Gb/s driver, a 30 Gb/s selector-driver, a 22 Gb/s decision circuit, and a decision-decoding circuit for multilevel transmissions
Keywords :
III-V semiconductors; bipolar digital integrated circuits; decoding; demultiplexing equipment; driver circuits; heterojunction bipolar transistors; indium compounds; integrated circuit design; multiplexing equipment; optical communication equipment; optical fibre communication; optical links; time division multiplexing; 20 to 40 Gbit/s; DHBT technology; ETDM; III-V semiconductors; InP; decision circuit; decision-decoding circuit; demultiplexer; design methodology; driver; electrical time division multiplex; high-bit-rate optical communications circuits; multilevel modulation format; multiplexer; optical communication links; selector-driver; Circuits; DH-HEMTs; Design methodology; Heterojunction bipolar transistors; Indium phosphide; Optical fiber communication; Optical receivers; Optical transmitters; Synchronous digital hierarchy; Wavelength division multiplexing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
