DocumentCode
1423184
Title
An integrated silicon bipolar receiver subsystem for 900-MHz ISM band applications
Author
Durec, Jeff
Author_Institution
Motorola Inc., Tempe, AZ, USA
Volume
33
Issue
9
fYear
1998
fDate
9/1/1998 12:00:00 AM
Firstpage
1352
Lastpage
1372
Abstract
A wide-band dual conversion receiver subsystem is presented which is suitable for 900-MHz portable wireless applications including cordless telephony. The circuit features 118 dB of dynamic range and is operable from 6.5 V down through 2.7 V while consuming 26 mA. The receiver utilizes the MOSAIC V radio frequency (RF) silicon bipolar process and features an LNA, two mixers, two oscillators, second LO amplifier, dual modulus prescaler, LF amplifier, RSSI, coilless demodulator, and power down control
Keywords
UHF integrated circuits; bipolar analogue integrated circuits; cordless telephone systems; mobile radio; radio receivers; 26 mA; 6.5 to 2.7 V; 900 MHz; MOSAIC V RF silicon bipolar process; Si; cordless telephony; integrated wideband dual conversion receiver; portable wireless; Circuits; Dynamic range; Oscillators; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Receivers; Silicon; Telephony; Wideband;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.711335
Filename
711335
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