Title :
An integrated silicon bipolar receiver subsystem for 900-MHz ISM band applications
Author_Institution :
Motorola Inc., Tempe, AZ, USA
fDate :
9/1/1998 12:00:00 AM
Abstract :
A wide-band dual conversion receiver subsystem is presented which is suitable for 900-MHz portable wireless applications including cordless telephony. The circuit features 118 dB of dynamic range and is operable from 6.5 V down through 2.7 V while consuming 26 mA. The receiver utilizes the MOSAIC V radio frequency (RF) silicon bipolar process and features an LNA, two mixers, two oscillators, second LO amplifier, dual modulus prescaler, LF amplifier, RSSI, coilless demodulator, and power down control
Keywords :
UHF integrated circuits; bipolar analogue integrated circuits; cordless telephone systems; mobile radio; radio receivers; 26 mA; 6.5 to 2.7 V; 900 MHz; MOSAIC V RF silicon bipolar process; Si; cordless telephony; integrated wideband dual conversion receiver; portable wireless; Circuits; Dynamic range; Oscillators; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Receivers; Silicon; Telephony; Wideband;
Journal_Title :
Solid-State Circuits, IEEE Journal of
