High power and high speed InP DHBT driver IC´s for laser modulation

Author

Meghelli, Mounir ; Bouche, Michel ; Konczykowska, Agnieszka

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

33

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1411

Lastpage

1416

Abstract

A driver IC and a 2:1 selector-driver IC developed for lightwave modulators are presented. The IC´s were fabricated in a standard InP/InGaAs double heterojunction bipolar transistor technology with 56 GHz F_t and 43 GHz F_max. The driver operates up to 20 Gb/s with an output voltage swing of 4 V_pp (corresponding to an internal current swing of 120 mA). The 2:1 selector-driver exhibits an output voltage swing of 2.2 V_pp at 30 Gb/s. Specific design and layout aspects of such circuits are discussed

Keywords

III-V semiconductors; bipolar integrated circuits; driver circuits; heterojunction bipolar transistors; indium compounds; optical modulation; 20 Gbit/s; 30 Gbit/s; InP-InGaAs; InP/InGaAs double heterojunction bipolar transistor; circuit design; circuit layout; high power high speed InP DHBT driver IC; laser modulation; lightwave modulator; selector-driver IC; Driver circuits; High speed integrated circuits; High speed optical techniques; Indium phosphide; Optical interferometry; Optical modulation; Optical receivers; Optical refraction; Power lasers; Time division multiplexing;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.711340

Filename

711340