Title :
High power and high speed InP DHBT driver IC´s for laser modulation
Author :
Meghelli, Mounir ; Bouche, Michel ; Konczykowska, Agnieszka
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
9/1/1998 12:00:00 AM
Abstract :
A driver IC and a 2:1 selector-driver IC developed for lightwave modulators are presented. The IC´s were fabricated in a standard InP/InGaAs double heterojunction bipolar transistor technology with 56 GHz Ft and 43 GHz Fmax. The driver operates up to 20 Gb/s with an output voltage swing of 4 Vpp (corresponding to an internal current swing of 120 mA). The 2:1 selector-driver exhibits an output voltage swing of 2.2 Vpp at 30 Gb/s. Specific design and layout aspects of such circuits are discussed
Keywords :
III-V semiconductors; bipolar integrated circuits; driver circuits; heterojunction bipolar transistors; indium compounds; optical modulation; 20 Gbit/s; 30 Gbit/s; InP-InGaAs; InP/InGaAs double heterojunction bipolar transistor; circuit design; circuit layout; high power high speed InP DHBT driver IC; laser modulation; lightwave modulator; selector-driver IC; Driver circuits; High speed integrated circuits; High speed optical techniques; Indium phosphide; Optical interferometry; Optical modulation; Optical receivers; Optical refraction; Power lasers; Time division multiplexing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
