Design of RF integrated circuits using SiGe bipolar technology

Author

Gotzfried, Rainer ; Beisswanger, Frank ; Gerlach, Stephan

Author_Institution

Temic Semicond. GmbH, Heilbronn, Germany

Volume

33

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1417

Lastpage

1422

Abstract

We report on design aspects and the implementation of radio-frequency integrated circuits using TEMIC´s SiGe technology. The differences between the device parameters of silicon bipolar junction transistor and silicon germanium heterojunction bipolar transistor technology and their influence on IC design are discussed. Design and measurement results of RFICs, including low noise amplifier, power amplifier, and single-pole, double-throw antenna switch for application in a 1.9 GHz digital enhanced cordless telecommunications RF front end are presented

Keywords

Ge-Si alloys; UHF integrated circuits; bipolar integrated circuits; integrated circuit design; semiconductor materials; 1.9 GHz; SiGe; SiGe bipolar technology; design; digital enhanced cordless telecommunications RF front end; low noise amplifier; power amplifier; radiofrequency integrated circuit; silicon bipolar junction transistor; silicon germanium heterojunction bipolar transistor; single-pole double-throw antenna switch; Bipolar integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon germanium; Switches;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.711341

Filename

711341