Title :
An approach for fabricating high-performance inductors on low-resistivity substrates
Author :
Xie, Ya-Hong ; Frei, Michel R. ; Becker, Andrew J. ; King, Clifford A. ; Kossives, D. ; Gomez, L.T. ; Theiss, S.K.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
9/1/1998 12:00:00 AM
Abstract :
Porous Si layers up to 250 μm in thickness are used to isolate spiral inductors from low resistivity substrates. Wafer curvature and secondary ion mass spectroscopy (SIMS) analysis are done to address the manufacturability issue of porous Si. Spiral inductors with a single level Al on 2 in, p-type substrates of 0.008 Ω-cm resistivity are demonstrated with Q<6 at 3 GHz for an L of ~8 nH. Large inductors with L~100 nH have been shown with the first resonance frequency at 1 GHz. The expected performance potential as well as factors that could be limiting the Q are discussed
Keywords :
CMOS integrated circuits; Q-factor; UHF integrated circuits; inductors; integrated circuit technology; mixed analogue-digital integrated circuits; porous materials; secondary ion mass spectra; silicon; substrates; 0.008 ohmcm; 250 micron; 3 GHz; Al-Si; Q-factor limitation; RFIC; SIMS analysis; Si; digital/RF circuits; high-performance inductors; inductor fabrication; low-resistivity substrates; p-type substrates; porous Si layers; secondary ion mass spectroscopy; single level Al; spiral inductor isolation; wafer curvature analysis; CMOS technology; Conductivity; Etching; Inductors; Mass spectroscopy; Radio frequency; Spirals; Stress; Substrates; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
