Title :
AlSb/InAs HEMT´s for low-voltage, high-speed applications
Author :
Boos, J. Brad ; Kruppa, Walter ; Bennett, Brian R. ; Park, Doewon ; Kirchoefer, Steven W. ; Bass, Robert ; Dietrich, Harry B.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
9/1/1998 12:00:00 AM
Abstract :
The design, fabrication, and characterization of 0.1 μm AlSb/InAs HEMT´s are reported. These devices have an In0.4Al 0.6As/AlSb composite barrier above the InAs channel and a p + GaSb layer within the AlSb buffer layer. The HEMT´s exhibit a transconductance of 600 mS/mm and an fT of 120 GHz at VDs=0.6 V. An intrinsic fT of 160 GHz is obtained after the gate bonding pad capacitance is removed from an equivalent circuit. The present HEMT´s have a noise figure of 1 dB with 14 dB associated gain at 4 GHz and VDs=0.4 V. Noise equivalent circuit simulation indicates that this noise figure is primarily limited by gate leakage current and that a noise figure of 0.3 dB at 4 GHz is achievable with expected technological improvements. HEMT´s with a 0.5 μm gate length on the same wafer exhibit a transconductance of 1 S/mm and an intrinsic fTLg, product of 50 GHz-μm
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; molecular beam epitaxial growth; semiconductor device models; semiconductor device noise; semiconductor growth; 0.1 micron; 0.3 to 1 dB; 120 GHz; 14 dB; 160 GHz; 4 GHz; 600 mS/mm; AlSb buffer layer; AlSb-InAs; AlSb/InAs HEMT; In0.4Al0.6As-AlSb; In0.4Al0.6As/AlSb composite barrier; InAs channel; MBE growth; characterization; fabrication; high-speed applications; low-voltage applications; noise equivalent circuit simulation; p+ GaSb layer; transconductance; Bonding; Buffer layers; Capacitance; Circuit noise; Equivalent circuits; Fabrication; Gain; HEMTs; Noise figure; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
