Title :
Long-wavelength 640×486 GaAs-AlGaAs quantum well infrared photodetector snap-shot camera
Author :
Gunapala, Sarath D. ; Bundara, S.V. ; Liu, John K. ; Hong, Winn ; Sundaram, Mani ; Maker, Paul D. ; Muller, Richard E. ; Shott, Craig A. ; Carralejo, Ronald
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
9/1/1998 12:00:00 AM
Abstract :
A 9-μm cutoff 640×486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP camera is reported including indoor and outdoor imaging. The noise equivalent differential temperature (NEΔT) of 36 mK has been achieved at 300 K background with f/2 optics. This is in good agreement with expected focal plane array sensitivity due to the practical limitations on charge handling capacity of the multiplexer, read noise, bias voltage, and operating temperature
Keywords :
III-V semiconductors; aluminium compounds; cameras; focal planes; gallium arsenide; infrared detectors; photodetectors; semiconductor quantum wells; 300 K; 9 micron; GaAs-AlGaAs; GaAs/AlGaAs quantum well; IR imaging; MQW structure; bias voltage; charge handling capacity; f/2 optics; focal plane array sensitivity; indoor imaging; infrared photodetector; long-wavelength IR detector; multiplexer; operating temperature; outdoor imaging; read noise; snap-shot camera; Cameras; Dark current; Gallium arsenide; Infrared imaging; Laboratories; Optical imaging; Optical noise; Photodetectors; Propulsion; Space technology;
Journal_Title :
Electron Devices, IEEE Transactions on
