Title :
Experimental and theoretical study of the current-voltage characteristics of the MISIM tunnel transistor
Author :
Majkusiak, Bogdan
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
fDate :
9/1/1998 12:00:00 AM
Abstract :
Current-voltage (I-V) characteristics of the metal-insulator-semiconductor-insulator-metal (MISIM) tunnel transistor in the common base and common emitter configurations are studied experimentally and theoretically. The Al-SiO2-Si(n)-SiO2 -Al transistors with oxide layers of about 2.5 nm thickness have been manufactured. The devices exhibit current gain above 30 in the common base configuration and switching in the common emitter configuration. A theoretical static model of the MISIM tunnel transistor has been developed and applied to analyze the measured I-V characteristics for both operation configurations. Excellent fit of the model to the experimental data has been achieved. Influence of oxide thickness and interface trap density on the switching voltage has been investigated theoretically
Keywords :
MIS devices; aluminium; bipolar transistors; elemental semiconductors; semiconductor device models; silicon; silicon compounds; tunnel transistors; tunnelling; 2.5 nm; Al-SiO2-Si-SiO2-Al; Al/SiO2/n-Si/SiO2/Al transistors; I-V characteristics; MISIM tunnel transistor; MOS technology; common base configuration; common emitter configuration; current gain; current-voltage characteristics; interface trap density; oxide layers; oxide thickness; switching voltage; theoretical static model; Bipolar transistors; Electrodes; Electrons; MOS devices; MOSFETs; Metal-insulator structures; Semiconductor diodes; Substrates; Switches; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
