Title :
The TEOS oxide deposited on phosphorus in-situ/POCl3 doped polysilicon with rapid thermal annealing in N2O
Author :
Kao, Chyuan-Haur ; Lai, Chao-Sung ; Lee, Chung-Len
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
9/1/1998 12:00:00 AM
Abstract :
This work presents a TEOS oxide deposited on the phosphorus-in-situ doped polysilicon with rapid thermal N2O annealing. The oxide exhibits good electron trapping characteristics with a charge-to-breakdown (Qbd) up to 110 C/cm2. It is due to the good polysilicon/oxide interface morphology obtained by replacing POCl3 doping with in-situ doping and the rapid thermal annealing in N2O. In addition, the N2O annealing densifies the deposited oxide and incorporates nitrogen into the oxide and at the polysilicon/oxide interface, thus improving the electrical characteristics
Keywords :
CVD coatings; dielectric thin films; electric breakdown; electron traps; nitrogen compounds; phosphorus; phosphorus compounds; rapid thermal annealing; semiconductor doping; semiconductor-insulator boundaries; silicon; EEPROM device application; N2O; P in-situ doped polysilicon; RTA; SiO2-Si:P-Si:POCl3; TEOS oxide; charge-to-breakdown; electrical characteristics improvement; electron trapping characteristics; phosphorus in-situ doping; polysilicon/oxide interface morphology; rapid thermal annealing; Dielectrics; Doping; EPROM; Electric variables; Grain boundaries; Nitrogen; Oxidation; Rapid thermal annealing; Surface morphology; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
