• DocumentCode
    1423338
  • Title

    Bayesian Analysis of Hazard Rate, Change Point, and Cost-Optimal Burn-In Time for Electronic Devices

  • Author

    Yuan, Tao ; Kuo, Yue

  • Author_Institution
    Dept. of Ind. & Syst. Eng., Ohio Univ., Athens, OH, USA
  • Volume
    59
  • Issue
    1
  • fYear
    2010
  • fDate
    3/1/2010 12:00:00 AM
  • Firstpage
    132
  • Lastpage
    138
  • Abstract
    This study develops a full Bayesian approach to analysing hazard rate, change point, and cost-optimal burn-in time for electronic devices. The Weibull-exponential distribution is used to model the L-shaped hazard rate function that is commonly observed for electronic devices. The optimal burn-in time is selected to minimize the prior or posterior total expected costs, which explicitly consider the uncertainties on all the model parameters. The proposed approach is illustrated using an experimental data set consisting of failure times of a nano-scale high-k gate dielectric film.
  • Keywords
    MOS capacitors; Weibull distribution; belief networks; hafnium; high-k dielectric thin films; tantalum compounds; L-shaped hazard rate function; TaO2:Hf; Weibull-exponential distribution; change point; cost-optimal burn-in time; electronic devices; failure times; full Bayesian approach; metal-oxide-semiconductor capacitors; nanoscale high-k gate dielectric film; Bayesian analysis; Weibull-exponential distribution; change point; optimal burn-in; time-dependent dielectric breakdown;
  • fLanguage
    English
  • Journal_Title
    Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9529
  • Type

    jour

  • DOI
    10.1109/TR.2010.2040776
  • Filename
    5418926