• DocumentCode
    1423469
  • Title

    DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K

  • Author

    Hatfield, Christopher W. ; Bilbro, Griff L. ; Allen, Scott T. ; Palmour, John W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
  • Volume
    45
  • Issue
    9
  • fYear
    1998
  • fDate
    9/1/1998 12:00:00 AM
  • Firstpage
    2072
  • Lastpage
    2074
  • Abstract
    The dc I-V characteristics of a 4H-SiC JFET at 773 K were predicted with SPISCES. These characteristics were used to estimate the RF performance of the JFET in a class A power amplifier. The results indicate that Ac=4.29, P1-dB=0.953 W/mm, and PAE=13.3% at low frequency, and that fT=6.1 GHz
  • Keywords
    junction gate field effect transistors; power amplifiers; radiofrequency amplifiers; semiconductor device models; semiconductor materials; silicon compounds; 13.3 percent; 4H-SiC JFET; 6.1 GHz; 773 K; DC I-V characteristics; RF performance; SPISCES; SiC; class A power amplifier; high temperature; Circuit simulation; Conductivity; MESFETs; Power amplifiers; Predictive models; Radio frequency; Radiofrequency amplifiers; Semiconductor devices; Silicon carbide; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.711376
  • Filename
    711376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1423469