Title :
DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K
Author :
Hatfield, Christopher W. ; Bilbro, Griff L. ; Allen, Scott T. ; Palmour, John W.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
9/1/1998 12:00:00 AM
Abstract :
The dc I-V characteristics of a 4H-SiC JFET at 773 K were predicted with SPISCES. These characteristics were used to estimate the RF performance of the JFET in a class A power amplifier. The results indicate that Ac=4.29, P1-dB=0.953 W/mm, and PAE=13.3% at low frequency, and that fT=6.1 GHz
Keywords :
junction gate field effect transistors; power amplifiers; radiofrequency amplifiers; semiconductor device models; semiconductor materials; silicon compounds; 13.3 percent; 4H-SiC JFET; 6.1 GHz; 773 K; DC I-V characteristics; RF performance; SPISCES; SiC; class A power amplifier; high temperature; Circuit simulation; Conductivity; MESFETs; Power amplifiers; Predictive models; Radio frequency; Radiofrequency amplifiers; Semiconductor devices; Silicon carbide; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
