GaAs MODFET transconductance stability

Author

Hanka, S.A. ; Chen, C.H. ; Vold, P. ; Akinwande, T.

Author_Institution

Honeywell Syst. & Res. Center, Bloomington, MN, USA

Volume

39

Issue

5

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

571

Lastpage

574

Abstract

The thermal stability of GaAs modulation-doped field effect transistors (MODFETs) is evaluated in order to identify failure mechanisms and validate the reliability of these devices. The transistors were exposed to thermal step-stress and characterized at ambient temperatures to indicate device reliability, especially that of the transistor ohmic contacts with and without molybdenum diffusion barriers. The device without molybdenum exhibited important transconductance deterioration. MODFETs with molybdenum diffusion barriers were tolerant to temperatures above 300°C. This tolerance indicates that thermally activated failure mechanisms are slow at operational temperatures. Therefore, high-reliability MODFET-based circuits are possible

Keywords

III-V semiconductors; failure analysis; gallium arsenide; high electron mobility transistors; reliability; stability; 300 degC; GaAs field effect transistors; MODFET; Mo diffusion barriers; ambient temperatures; failure mechanisms; modulation-doped field effect transistors; reliability; semiconductor; thermal step-stress; thermally activated failure mechanisms; transconductance stability; transistor ohmic contacts; Failure analysis; Gallium arsenide; HEMTs; MODFET circuits; Ohmic contacts; Stability; Temperature; Testing; Thermal stresses; Transconductance;

fLanguage

English

Journal_Title

Reliability, IEEE Transactions on

Publisher

ieee

ISSN

0018-9529

Type

jour

DOI

10.1109/24.61313

Filename

61313