• DocumentCode
    1423500
  • Title

    Optically induced sidegating current isolation of GaAs MESFET by multiquantum barrier

  • Author

    Lee, Ching-Ting

  • Author_Institution
    Inst. of Opt. Sci., Nat. Central Univ., Chung-Li, Taiwan
  • Volume
    45
  • Issue
    9
  • fYear
    1998
  • fDate
    9/1/1998 12:00:00 AM
  • Firstpage
    2083
  • Lastpage
    2085
  • Abstract
    The multiquantum barrier buffer layer in GaAs MESFET configuration exhibits great reduction on the optically induced sidegating current. The electrical and optically induced sidegating current suppressions of enhanced potential barrier height achieved with multiquantum barrier buffer layer are clearly demonstrated
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; isolation technology; GaAs; GaAs MESFET; multiquantum barrier buffer layer; optically induced sidegating current isolation; potential barrier height; Acoustical engineering; Circuit noise; FETs; Gallium arsenide; HEMTs; MESFETs; Noise figure; Optical buffering; Optical noise; Semiconductor device noise;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.711381
  • Filename
    711381
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1423500