DocumentCode
1423538
Title
Lineshape measurement of semiconductor lasers below threshold
Author
Kikuchi, Kazuro
Author_Institution
Dept. of Electron. Eng., Tokyo Univ., Japan
Volume
24
Issue
9
fYear
1988
fDate
9/1/1988 12:00:00 AM
Firstpage
1814
Lastpage
1817
Abstract
A novel heterodyne method for measuring the linewidth ranging from 100 MHz to 100 GHz is developed. The line shape of 1.3-μm DFB (distributed-feedback) lasers biased below threshold is measured by the use of this method. The center-frequency shift and the linewidth are determined as functions of the bias current, showing linear dependencies on the bias current. From this result, the linewidth enhancement factor is estimated
Keywords
distributed feedback lasers; laser beams; laser transitions; semiconductor junction lasers; 1.3 micron; 100 MHz to 100 GHz; DFB laser; bias current; distributed feedback laser; linewidth enhancement factor; semiconductor lasers; Bandwidth; Frequency; Laser theory; Laser tuning; Local oscillators; Photodetectors; Power lasers; Semiconductor lasers; Shape measurement; Testing;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.7119
Filename
7119
Link To Document