Title :
Lineshape measurement of semiconductor lasers below threshold
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
fDate :
9/1/1988 12:00:00 AM
Abstract :
A novel heterodyne method for measuring the linewidth ranging from 100 MHz to 100 GHz is developed. The line shape of 1.3-μm DFB (distributed-feedback) lasers biased below threshold is measured by the use of this method. The center-frequency shift and the linewidth are determined as functions of the bias current, showing linear dependencies on the bias current. From this result, the linewidth enhancement factor is estimated
Keywords :
distributed feedback lasers; laser beams; laser transitions; semiconductor junction lasers; 1.3 micron; 100 MHz to 100 GHz; DFB laser; bias current; distributed feedback laser; linewidth enhancement factor; semiconductor lasers; Bandwidth; Frequency; Laser theory; Laser tuning; Local oscillators; Photodetectors; Power lasers; Semiconductor lasers; Shape measurement; Testing;
Journal_Title :
Quantum Electronics, IEEE Journal of
