DocumentCode
1423618
Title
GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 
m at Room Temperature
Author
Cerutti, L. ; Rodriguez, J.B. ; Tournie, E.
Author_Institution
Inst. Electron. du Sud (IES), Univ. Montpellier 2, Montpellier, France
Volume
22
Issue
8
fYear
2010
fDate
4/15/2010 12:00:00 AM
Firstpage
553
Lastpage
555
Abstract
We have investigated the potential of GaSb-based lasers for emission at 1.55 μm and monolithic integration on silicon. We designed an active region based on strained Ga0.8In0.2Sb quantum-wells aiming a good carrier confinement. To validate this design, the active region was first used in edge-emitting lasers grown on GaSb substrates. Continuous-wave operation at 1.56 μm has been achieved up to 45°C. The same laser structure grown on Si substrate showed room-temperature operation in pulsed regime at 1.55 μm with a threshold current density of 5 kA/cm2.
Keywords
III-V semiconductors; current density; gallium compounds; indium compounds; integrated optoelectronics; monolithic integrated circuits; quantum well lasers; Ga0.8In0.2Sb; GaSb; Si; carrier confinement; continuous-wave operation; current density; edge-emitting lasers; monolithic integration; monolithically grown laser; quantum-well lasers; temperature 293 K to 298 K; wavelength 1.55 μm; wavelength 1.56 μm; Antimonide; GaInSb quantum well (QW); GaSb substrate; monolithic integration; semiconductor lasers; silicon substrate;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2010.2042591
Filename
5419016
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