Title :
Extremely large differential gain of 1.26 μm GaInNAsSb-SQW ridge lasers
Author :
Shimizu, H. ; Kumada, K. ; Uchiyama, S. ; Kasukawa, A.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
1/4/2001 12:00:00 AM
Abstract :
The differential gain of long wavelength GaInNAs-based quantum film (QF) lasers and highly strained GaInAs-based QF lasers have been investigated for the first time. These lasers were grown by gas-source molecular beam epitaxy, and include a small amount of Sb to improve the crystalline quality. GaInNAsSb single quantum well (SQW) ridge lasers that oscillate at 1.258 μm have an extremely large differential gain of 1.06×10-15 cm2 in spite of the SQW lasers; therefore GaInNAsSb lasers are suitable for high-speed lasers in the long wavelength region
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; laser beams; laser noise; laser variables measurement; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 1.258 mum; 1.26 mum; GaInAs; GaInNAs; GaInNAsSb; GaInNAsSb-SQW ridge lasers; crystalline quality; differential gain; gas-source molecular beam epitaxy; high-speed lasers; highly strained GaInAs-based quantum film lasers; highly strained quantum film lasers; long wavelength GaInNAs-based quantum film lasers; long wavelength quantum film lasers; long wavelength region; quantum film lasers; ridge lasers; single quantum well ridge lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010021
