Title :
TlInGaAs/InP DH LEDs with small temperature variation in EL peak energy
Author :
Konishi, K. ; Asahi, H. ; Maeda, O. ; Zhou, Y.K. ; Lee, H.-J. ; Mizobata, A. ; Asami, K.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
fDate :
1/4/2001 12:00:00 AM
Abstract :
TlInGaAs-InP double heterostructure light emitting diodes with a Tl composition of 6% operating in the wavelength range of 1.58 μm have been fabricated by gas source molecular beam epitaxy and a very small temperature variation in the electroluminescence peak energy (-0.09 meV/K) observed
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; indium compounds; light emitting diodes; molecular beam epitaxial growth; optical communication equipment; optical fabrication; thulium compounds; wavelength division multiplexing; 1.58 mum; EL peak energy; Tl; Tl composition; TlInGaAs-InP; TlInGaAs-InP double heterostructure light emitting diodes; TlInGaAs/InP DH LEDs; electroluminescence peak energy; gas source molecular beam epitaxy; small temperature variation; very small temperature variation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010012
