DocumentCode :
1423720
Title :
20-Gb/s 850-nm Oxide VCSEL Operating at 25 
C–70 C
Author :
Ji, Chen ; Wang, Jingyi ; Söderström, David ; Giovane, Laura
Author_Institution :
Fiber Opt. Product Div., Avago Technol., San Jose, CA, USA
Volume :
22
Issue :
10
fYear :
2010
fDate :
5/15/2010 12:00:00 AM
Firstpage :
670
Lastpage :
672
Abstract :
We report a small aperture 850-nm oxide vertical-cavity surface-emitting laser (VCSEL) operating at 20 Gb/s (pseudorandom bit sequence 31) 25??C-70??C with 5 dB extinction ratio. The VCSEL is designed to target anticipated 20-Gb/s transceiver module requirements, and is fabricated using production equipment including metal-organic chemical vapor deposition reactors for the growth of GaAs-AlGaAs epitaxy. We have characterized small signal modulation response properties in detail and obtained good agreement with finite element VCSEL simulation results. Preliminary accelerated lifetime testing indicated that the wear out lifetime would exceed 10 years for 70??C operations.
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; epitaxial growth; gallium arsenide; life testing; surface emitting lasers; GaAs-AlGaAs; accelerated lifetime testing; bit rate 20 Gbit/s; epitaxial growth; metal organic chemical vapor deposition; oxide vertical cavity surface emitting laser; size 850 nm; small signal modulation; temperature 25 C to 70 C; 20-Gb/s eye diagram; 850-nm oxide vertical-cavity surface-emitting laser (VCSEL); finite-element simulation; long-term reliability; small signal modulation; vertical-cavity surface-emitting laser (VCSEL);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2043667
Filename :
5419040
Link To Document :
