• DocumentCode
    1423735
  • Title

    Design and characterisation of singly balanced silicon carbide Schottky diode high-level mixer

  • Author

    Eriksson, J. ; Rorsman, N. ; Ferdos, F. ; Zirath, H.

  • Author_Institution
    Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
  • Volume
    37
  • Issue
    1
  • fYear
    2001
  • fDate
    1/4/2001 12:00:00 AM
  • Firstpage
    54
  • Lastpage
    55
  • Abstract
    A singly balanced silicon carbide Schottky diode mixer was designed and characterised. The mixer has a minimum conversion loss of 5.2 dB and a third-order intermodulation input intercept point of 31 dBm at 850 MHz
  • Keywords
    Schottky diode mixers; UHF diodes; UHF mixers; intermodulation distortion; silicon compounds; wide band gap semiconductors; 5.2 dB; 850 GHz; IIP3; Schottky diode high-level mixer; SiC; SiC Schottky diode mixer; conversion loss; intermodulation input intercept point; low IMD; singly balanced UHF mixer; third-order IM input intercept point;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010004
  • Filename
    894362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1423735