Title :
Design and characterisation of singly balanced silicon carbide Schottky diode high-level mixer
Author :
Eriksson, J. ; Rorsman, N. ; Ferdos, F. ; Zirath, H.
Author_Institution :
Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
1/4/2001 12:00:00 AM
Abstract :
A singly balanced silicon carbide Schottky diode mixer was designed and characterised. The mixer has a minimum conversion loss of 5.2 dB and a third-order intermodulation input intercept point of 31 dBm at 850 MHz
Keywords :
Schottky diode mixers; UHF diodes; UHF mixers; intermodulation distortion; silicon compounds; wide band gap semiconductors; 5.2 dB; 850 GHz; IIP3; Schottky diode high-level mixer; SiC; SiC Schottky diode mixer; conversion loss; intermodulation input intercept point; low IMD; singly balanced UHF mixer; third-order IM input intercept point;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010004
