Title :
Effect of switched biasing on 1/f noise and random telegraph signals in deep-submicron MOSFETs
Author :
van der Wel, A.P. ; Klumperink, E.A.M. ; Nauta, B.
Author_Institution :
IC Design Group, Twente Univ., Enschede, Netherlands
fDate :
1/4/2001 12:00:00 AM
Abstract :
Switched bias noise measurements on relatively large (>0.8 μm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 μm n-channel MOSFETs, the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices
Keywords :
1/f noise; CMOS integrated circuits; MOSFET; integrated circuit noise; interface states; semiconductor device measurement; semiconductor device noise; 0.18 micron; 0.2 micron; 1/f noise; CMOS process; deep-submicron MOSFETs; device noise reduction; dynamic behaviour; interface states; n-channel MOSFETs; noise performance; random telegraph signals; switched bias noise measurements; switched biasing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010008
