Title :
Electro-thermal resonance in MOSFET devices
Author :
Codecasa, L. ; D´Amore, D. ; Maffezzoni, P.
Author_Institution :
Dipt. di Elettronica e Inf., Politecnico di Milano, Italy
fDate :
1/4/2001 12:00:00 AM
Abstract :
Previously presented work on electro-thermal interaction in silicon devices is extended. It is shown that an electro-thermal resonance oscillation can be induced in a MOSFET device, allowing an easy evaluation of thermal parameters
Keywords :
MOSFET; elemental semiconductors; equivalent circuits; resonance; semiconductor device models; silicon; thermal analysis; MOSFET devices; Si; Si MOSFETs; electro-thermal resonance; resonance oscillation; thermal parameters evaluation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010045
