• DocumentCode
    1423754
  • Title

    Reverse current characteristics in ITO/c-Si anisotype heterojunctions

  • Author

    Pelino, A. ; Conte, G.

  • Author_Institution
    INFM, Rome Univ., Italy
  • Volume
    37
  • Issue
    1
  • fYear
    2001
  • fDate
    1/4/2001 12:00:00 AM
  • Firstpage
    58
  • Lastpage
    59
  • Abstract
    High dark reverse currents in (n+)ITO/(p)c-Si junctions strongly affect the performance of high-speed, UV-enhanced photodiodes. The transport mechanism involved and the role of interface defects are investigated. Deleterious effects can be minimised by the introduction of a thin a-Si:H layer, mainly due to the effusion and passivating action of the trapped hydrogen
  • Keywords
    dark conductivity; elemental semiconductors; indium compounds; p-n heterojunctions; passivation; photodiodes; silicon; tin compounds; ITO-Si; InSnO-Si; UV-enhanced photodiodes; anisotype heterojunctions; dark reverse currents; effusion; interface defects; passivating action; reverse current characteristic; transport mechanism;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010023
  • Filename
    894365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1423754