Title :
Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane (
) GaN Light-Emitting Diodes on Sapphire Substrate
Author :
Baik, Kwang Hyeon ; Seo, Yong Gon ; Hong, Soon-Ku ; Lee, Seogwoo ; Kim, Jaebum ; Son, Ji-Su ; Hwang, Sung-Min
Author_Institution :
Optoelectron. Lab., Korea Electron. Technol. Inst., Seongnam, South Korea
fDate :
5/1/2010 12:00:00 AM
Abstract :
We report on the effects of basal stacking faults (BSFs) on the electrical anisotropy and the device characteristics of nonpolar a-plane GaN (1120) light-emitting diodes (LEDs) on r-plane (1102 ) sapphire substrates. The sheet resistance in the direction parallel to the c-axis [0001] is 18%-70% higher than the one in the direction parallel to the m-axis [1100 ]. The anisotropic conductivity of faulted a-plane GaN films can be explained by carrier scatterings from BSFs. It is also shown that the output power of nonpolar a-plane GaN LEDs are significantly influenced by the presence of BSFs, which laterally hampers the carrier transport in the n-GaN layer, especially in the direction parallel to the c-axis in faulted nonpolar nitride films.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor thin films; stacking; GaN; basal stacking faults; carrier scatterings; faulted nonpolar nitride films; light-emitting diodes; sheet resistance; a-plane; basal stacking faults (BSFs); gallium nitride; light-emitting diode (LED); nonpolar;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2042950