DocumentCode
1423806
Title
Highly Linear Low Noise Amplifier for 2.45 GHz
Author
Werker, Stephan ; Stedler, Christian ; Kronberger, Rainer
Author_Institution
Cologne Univ. of Appl. Sci., Cologne, Germany
Volume
13
Issue
1
fYear
2012
Firstpage
146
Lastpage
151
Abstract
The quality of a communication system is mainly influenced by the sensitivity of the receiver. A critical receiver stage is the first amplifier [low noise amplifier (LNA)] that should have a low noise figure (NF) as well as sufficient gain to provide high sensitivity and also a high dynamic range to avoid intermodulation products from strong signals. The third-order intermodulation products have substantial influence on the receiver performance. These undesired signals appear in a band close to the operating frequency and cause interference in the receiver system. In most cases intermodulation can be reduced by increasing the current through the active device [transistor, field effect transistor (FET), etc.], however with mobile terminals, the power consumption is an essential factor and therefore a tradeoff is required. The objective of the LNA Student Design Contest at the 2011 IEEE International Microwave Symposium (IMS2011) in Baltimore was to construct an LNA that also takes into account the linearity and a the overall power consumption.
Keywords
UHF amplifiers; UHF integrated circuits; intermodulation; low noise amplifiers; low-power electronics; 2011 IEEE International Microwave Symposium; FET; IMS2011; LNA Student Design Contest; NF; communication system; field effect transistor; frequency 2.45 GHz; high linear LNA; highly linear low noise amplifier; mobile terminal; noise figure; power consumption; third-order intermodulation product; Capacitors; Field effect transistors; Linearity; Mobile communication; Noise measurement; Radio frequency; Transistors;
fLanguage
English
Journal_Title
Microwave Magazine, IEEE
Publisher
ieee
ISSN
1527-3342
Type
jour
DOI
10.1109/MMM.2011.2174124
Filename
6132309
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