Tunneling in HTS junctions

The effects caused by the layered structure of high-temperature superconductors (HTS) ought to be taken into consideration at the time of constructing different HTS junction devices. The authors demonstrate this by studying tunneling phenomena in HTS. The tunneling current-voltage characteristics of different structures such as "Normal Metal-Insulator-HTS" (NIS-structure) and "HTS-Insulator-HTS" (SIS-structure) are calculated. The real layered structure of HSS is taken into account and corresponding peculiarities on I(V) are obtained. The authors have analyzed different types of contacts which are realized in the NIS- and SIS-junctions. The contributions of the superconducting and normal layers of HTS to the tunneling current of NIS- and SIS-structures are found.