Temperature performance of 1.3-μm InGaAsP-InP lasers with different profile of p-doping

Temperature dependencies of the threshold current, device slope efficiency, and heterobarrier electron leakage current from the active region of InGaAsP-InP multiquantum-well (MQW) lasers with different profiles of acceptor doping were measured. We demonstrate that the temperature sensitivity of the device characteristics depends on the profile of p-doping, and that the variance in the temperature behavior of the threshold current and slope efficiency for lasers with different doping profiles cannot be explained by the change of the measured value of the leakage current with doping only. The entire experimental data can be qualitatively explained by suggesting that doping ran affect the value of electrostatic band profile deformation that affects temperature sensitivity of the output device characteristics. We show that doping of the p-cladding/SCH layer interface in InGaAsP-InP MQW lasers leads to improvement of the device temperature performance.