• DocumentCode
    1423937
  • Title

    High-speed lightwave communication ICs based on III-V compound semiconductors

  • Author

    Sano, Eiichi

  • Author_Institution
    NTT Photonics Labs
  • Volume
    39
  • Issue
    1
  • fYear
    2001
  • fDate
    1/1/2001 12:00:00 AM
  • Firstpage
    154
  • Lastpage
    158
  • Abstract
    Ultra-high-speed ICs are one of the keys to achieving large-capacity lightwave communications systems. This article reviews advances in lightwave communication ICs based on III-V compound semiconductors developed to obtain next-generation 40-Gb/s/wavelength channel systems
  • Keywords
    III-V semiconductors; high-speed optical techniques; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; 40 Gbit/s; III-V compound semiconductors; high-speed lightwave communication IC; large-capacity lightwave communications systems; Bit rate; Circuits; Erbium-doped fiber amplifier; HEMTs; III-V semiconductor materials; MODFETs; Optical receivers; Optical transmitters; Time division multiplexing; Wavelength division multiplexing;
  • fLanguage
    English
  • Journal_Title
    Communications Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    0163-6804
  • Type

    jour

  • DOI
    10.1109/35.894390
  • Filename
    894390