Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array

Author

Kim, Byeong Hoon ; Byun, Chun Won ; Yoon, Sung-Min ; Yang, Shin Hyuk ; Jung, Soon-Won ; Ryu, Min Ki ; Park, Sang-Hee Ko ; Hwang, Chi-Sun ; Cho, Kyoung-Ik ; Kwon, Oh-Sang ; Park, Eun-Suk ; Oh, Him Chan ; Kim, Kyoung-Hwan ; Park, Kee Chan

Author_Institution

Dept. of Electron. Eng., Konkuk Univ., Seoul, South Korea

Volume

32

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

324

Lastpage

326

Abstract

A new ferroelectric memory array on a glass substrate has been developed using In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is employed as the gate dielectric layer of the FeTFT. All the fabrication processes were performed below 200°C. The fabricated memory successfully demonstrated disturb-free write/readout operation. The current ratio between the “1” and “0” states is about 10⁴.

Keywords

ferroelectric storage; gallium compounds; indium compounds; thin film transistors; zinc compounds; In-Ga-Zn-O; ferroelectric memory array; ferroelectric thin-film-transistor; gate dielectric layer; glass substrate; oxide-thin-film-transistor; poly(vinylidene fluoride-trifluoroethylene); Disturb-free; In–Ga–Zn–O (IGZO); ferroelectric memory; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2096197

Filename

5685798