DocumentCode
1424142
Title
Near-Infrared Ge-on-Si Power Monitors Monolithically Integrated on SOI Chips
Author
Colace, Lorenzo ; Sorianello, Vito ; Romagnoli, Marco ; Assanto, Gaetano
Author_Institution
Dept. of Electron. Eng., Univ. "Roma Tre", Rome, Italy
Volume
22
Issue
9
fYear
2010
fDate
5/1/2010 12:00:00 AM
Firstpage
658
Lastpage
660
Abstract
We realize and test power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide photodetectors in evaporated germanium with front-end transimpedance amplifiers. The power monitors operate with signals as small as 10 nW, with errors below 0.2% and 2% at 1 and 0.1 ??W , respectively.
Keywords
Ge-Si alloys; integrated optoelectronics; optical waveguides; photodetectors; power measurement; silicon-on-insulator; Ge-Si; SOI chips; evaporated germanium; front-end transimpedance amplifiers; near-infrared Ge-on-Si power monitors; near-infrared waveguide photodetectors; silicon-on-insulator optical chips; Germanium; monolithic integration; near-infrared (NIR); photodetectors; power monitor;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2010.2043729
Filename
5419105
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