Title :
Near-Infrared Ge-on-Si Power Monitors Monolithically Integrated on SOI Chips
Author :
Colace, Lorenzo ; Sorianello, Vito ; Romagnoli, Marco ; Assanto, Gaetano
Author_Institution :
Dept. of Electron. Eng., Univ. "Roma Tre", Rome, Italy
fDate :
5/1/2010 12:00:00 AM
Abstract :
We realize and test power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide photodetectors in evaporated germanium with front-end transimpedance amplifiers. The power monitors operate with signals as small as 10 nW, with errors below 0.2% and 2% at 1 and 0.1 ??W , respectively.
Keywords :
Ge-Si alloys; integrated optoelectronics; optical waveguides; photodetectors; power measurement; silicon-on-insulator; Ge-Si; SOI chips; evaporated germanium; front-end transimpedance amplifiers; near-infrared Ge-on-Si power monitors; near-infrared waveguide photodetectors; silicon-on-insulator optical chips; Germanium; monolithic integration; near-infrared (NIR); photodetectors; power monitor;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2043729
