Title :
Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors
Author :
Yang, Ya-Hui ; Yang, Sidney S. ; Kao, Chen-Yen ; Chou, Kan-San
Author_Institution :
Inst. of Photonics Technol., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
4/1/2010 12:00:00 AM
Abstract :
We have fabricated a bottom-gate thin-film transistor (TFT) with the active layer of indium-gallium-zinc-oxide (IGZO) nanoparticles prepared from water solution. Polycrystallized InGaZn2O5 films were formed by a spin-coating method and postbaked at low temperature (95??C). The morphology of the IGZO film indicates that not only are the grain size and shape uniform but also the cross section of the film appears dense, considering that the films were fabricated by a solution process at low temperature. The TFT device shows good switching ability, high drain current (> 105 A), and low threshold voltage (0.9 V). Its field-effect mobility of 2.3 cm2/V ?? s and ON-OFF current ratio over 106 are very promising for TFT applications.
Keywords :
electronic equipment manufacture; nanoparticles; spin coating; thin film transistors; Ga; In; O; TFT device; Zn; bottom-gate thin-film transistor; chemical properties; drain current; electrical properties; field-effect mobility; indium-gallium-zinc-oxide nanoparticles; low-temperature solution-processed thin-film transistors; spin-coating method; switching ability; threshold voltage; Indium–gallium–zinc oxide (IGZO); metal–insulator–oxide–semiconductor devices; solution-processed; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2041425
