Title :
High brightness and reliable AlGaInP-based light-emitting diode for POF data links
Author :
Dutta, Achyut Kumar ; Ueda, Kiyoe ; Hara, Kunihiro ; Kobayashi, Kenichi
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Tsukuba, Japan
Abstract :
High brightness and reliability operation ring light-emitting diode (LED) is fabricated for plastic optical fiber (POF) link using the distributed Bragg reflector (DBR) mirror and antireflection (AR) coating. The ring LED exhibited optical output as high as 3.5 mW at the bias current of 100 mA. Furthermore, the projection lifetime is also estimated to be 1/spl times/10/sup 6/ h at a 35-mA data-link operating current and ambient temperature of 60/spl deg/C.
Keywords :
III-V semiconductors; aluminium compounds; brightness; data communication; gallium compounds; indium compounds; light emitting diodes; mirrors; optical communication equipment; optical fibre communication; semiconductor device reliability; 100 mA; 3.5 mW; 35 mA; 60 C; AlGaInP; LED; POF data links; ambient temperature; antireflection coating; bias current; data-link operating current; distributed Bragg reflector mirror; high brightness; light-emitting diode; optical transmitters; plastic optical fiber link; projection lifetime; reliable AlGaInP-based light-emitting diode; ring LED; Brightness; Coatings; Distributed Bragg reflectors; Life estimation; Lifetime estimation; Light emitting diodes; Mirrors; Optical fibers; Plastics; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
