High brightness and reliable AlGaInP-based light-emitting diode for POF data links

Author

Dutta, Achyut Kumar ; Ueda, Kiyoe ; Hara, Kunihiro ; Kobayashi, Kenichi

Author_Institution

Opto-Electron. Res. Labs., NEC Corp., Tsukuba, Japan

Volume

9

Issue

12

fYear

1997

Firstpage

1567

Lastpage

1569

Abstract

High brightness and reliability operation ring light-emitting diode (LED) is fabricated for plastic optical fiber (POF) link using the distributed Bragg reflector (DBR) mirror and antireflection (AR) coating. The ring LED exhibited optical output as high as 3.5 mW at the bias current of 100 mA. Furthermore, the projection lifetime is also estimated to be 1/spl times/10/sup 6/ h at a 35-mA data-link operating current and ambient temperature of 60/spl deg/C.

Keywords

III-V semiconductors; aluminium compounds; brightness; data communication; gallium compounds; indium compounds; light emitting diodes; mirrors; optical communication equipment; optical fibre communication; semiconductor device reliability; 100 mA; 3.5 mW; 35 mA; 60 C; AlGaInP; LED; POF data links; ambient temperature; antireflection coating; bias current; data-link operating current; distributed Bragg reflector mirror; high brightness; light-emitting diode; optical transmitters; plastic optical fiber link; projection lifetime; reliable AlGaInP-based light-emitting diode; ring LED; Brightness; Coatings; Distributed Bragg reflectors; Life estimation; Lifetime estimation; Light emitting diodes; Mirrors; Optical fibers; Plastics; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.643263

Filename

643263