Optimization of the optical sensitivity of p-i-n FET receivers

Author

Vella-Coleiro, G.P.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

9

Issue

6

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

269

Lastpage

271

Abstract

The optimization of the input stage of a p-i-n FET receiver is discussed, with emphasis on the implications for an integrated InP/InGaAs p-i-n FET technology. In the early stages of development of this technology, it is necessary to keep the design simple, which implies that the device will consist of a single-stage, low-gain amplifier. Design criteria for such an amplifier are presented, and it is shown that the transimpedance configuration provides better sensitivity than a voltage amplifier, even when the gain of the amplifier is very small. It is also shown that the gate capacitance (i.e. width) of the input FET which optimizes the sensitivity is much smaller when the amplifier gain is low than it is in the high-gain limit.<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; preamplifiers; semiconductor device models; InP-InGaAs; design criteria; gate capacitance; high bit rate; input stage; integrated InP/InGaAs p-i-n FET technology; low-gain amplifier; optical sensitivity; optimization; p-i-n FET receivers; semiconductors; transimpedance configuration; FETs; Indium gallium arsenide; Indium phosphide; Low-frequency noise; Optical amplifiers; Optical receivers; Optical sensors; PIN photodiodes; Photodetectors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.713

Filename

713