DocumentCode
14247
Title
Multiobjective Design Optimization of IGBT Power Modules Considering Power Cycling and Thermal Cycling
Author
Bing Ji ; Xueguan Song ; Sciberras, Edward ; Wenping Cao ; Yihua Hu ; Pickert, Volker
Author_Institution
Sch. of Electr. & Electron. Eng., Newcastle Univ., Newcastle upon Tyne, UK
Volume
30
Issue
5
fYear
2015
fDate
May-15
Firstpage
2493
Lastpage
2504
Abstract
Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power conversion applications where their reliability is of significant concern. Standard IGBT modules are fabricated for general-purpose applications while little has been designed for bespoke applications. However, conventional design of IGBTs can be improved by the multiobjective optimization technique. This paper proposes a novel design method to consider die-attachment solder failures induced by short power cycling and baseplate solder fatigue induced by the thermal cycling which are among major failure mechanisms of IGBTs. Thermal resistance is calculated analytically and the plastic work design is obtained with a high-fidelity finite-element model, which has been validated experimentally. The objective of minimizing the plastic work and constrain functions is formulated by the surrogate model. The nondominated sorting genetic algorithm-II is used to search for the Pareto-optimal solutions and the best design. The result of this combination generates an effective approach to optimize the physical structure of power electronic modules, taking account of historical environmental and operational conditions in the field.
Keywords
finite element analysis; genetic algorithms; insulated gate bipolar transistors; power electronics; IGBT power modules; Pareto-optimal solutions; baseplate solder fatigue; consider die-attachment solder failures; high-fidelity finite-element model; insulated-gate bipolar transistor; multiobjective design optimization; nondominated sorting genetic algorithm-II; power cycling; power electronic modules; thermal cycling; thermal resistance; Fatigue; Insulated gate bipolar transistors; Multichip modules; Optimization; Resistance; Strain; Stress; Aging; Aging, fatigue; fatigue; finite element methods; finite-element (FE) methods; insulated gate bipolar transistors; insulated-gate bipolar transistors (IGBTs); multi-objective; multiobjective; optimization methods; power cycling; power cycling (PC); reliability; thermal cycling; thermal cycling (TC);
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/TPEL.2014.2365531
Filename
6937146
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