DocumentCode :
1424718
Title :
Burn-in effect on yield
Author :
Kim, Taeho ; Kuo, Way ; Chien, Wei-Ting Kary
Author_Institution :
Planning & Coordination Office, Korea Telecom, Kyonggi, South Korea
Volume :
23
Issue :
4
fYear :
2000
fDate :
10/1/2000 12:00:00 AM
Firstpage :
293
Lastpage :
299
Abstract :
By removing infant mortalities, burn-in of semiconductor devices improves reliability. However, burn-in may affect the yield of semiconductor devices since defects grow during burn-in and some of them end up with yield loss. The amount of yield loss depends upon burn-in environments. Another burn-in effect is the yield gain. Since yield is a function of defect density, if some defects are detected and removed during burn-in, the yield of the post-burn-in process can be expected to increase. The amount of yield gain depends upon the number of defects removed during burn-in. In this paper we present yield loss and gain expressions and relate them with the reliability projection of semiconductor devices in order to determine burn-in time
Keywords :
environmental stress screening; integrated circuit reliability; integrated circuit yield; IC manufacture; burn-in effect; burn-in environment dependence; burn-in time; defect density; defect growth; infant mortalities removal; reliability; semiconductor device yield; yield gain; yield loss; Breakdown voltage; Circuits; Complexity theory; Inspection; Semiconductor device manufacture; Semiconductor device reliability; Semiconductor devices; Stress; Temperature dependence; Testing;
fLanguage :
English
Journal_Title :
Electronics Packaging Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-334X
Type :
jour
DOI :
10.1109/6104.895074
Filename :
895074
Link To Document :
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