DocumentCode :
1424767
Title :
Non-linear diffusion of minority carriers
Author :
Amer, S.
Author_Institution :
Standard Telephones and Cables Ltd., UK
Volume :
110
Issue :
4
fYear :
1963
fDate :
4/1/1963 12:00:00 AM
Firstpage :
641
Lastpage :
646
Abstract :
A study of the non-linear diffusion of minority carriers has been carried out. Once the starting terms have been defined, i.e. the diffusion constant depends on carrier concentration according to Webster´s formula Dp=Dp0(1+P/P+Nd) an exact first integral is found, from which a study of the influence of bulk recombination on the current gain of a transistor is made. An expression for the base control charge is also found. Finally approximate formulae are derived showing the dependence of carrier concentration on distance. Results are valid for any injection level and distance. Rittner has studied the same problem when the lifetime of minority carriers is infinite. His results are not very different from the linear theory and do not provide a good description at distances larger than the diffusion length.
Keywords :
semiconductor devices; transistors;
fLanguage :
English
Journal_Title :
Electrical Engineers, Proceedings of the Institution of
Publisher :
iet
ISSN :
0020-3270
Type :
jour
DOI :
10.1049/piee.1963.0087
Filename :
5249771
Link To Document :
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