Direct extraction of nonlinear FET Q-V functions from time domain large signal measurements

Author

Currás-Francos, M.C. ; Tasker, P.J. ; Fernández-Barciela, M. ; Campos-Roca, Y. ; Sánchez, E.

Author_Institution

ETSI Telecomunicacion, Vigo Univ., Spain

Volume

10

Issue

12

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

531

Lastpage

533

Abstract

The authors present a simple and accurate procedure for the direct extraction of the quasi-static FET model nonlinear charge functions from large signal measurements. The method is based on the proper use of a vector nonlinear network analyzer (VNNA) with load-pull facilities. To our knowledge, these results show for the first time a direct procedure to extract the nonlinear charges of a FET using a very reduced number of large signal measurements

Keywords

equivalent circuits; high electron mobility transistors; microwave field effect transistors; microwave measurement; network analysers; semiconductor device measurement; semiconductor device models; FET model nonlinear charge functions; MODFET; VNNA; direct extraction; load-pull facilities; nonlinear FET Q-V functions; nonlinear HEMT model; quasi-static FET model; time domain large signal measurements; vector nonlinear network analyzer; Capacitance; Charge measurement; Current measurement; DC generators; HEMTs; Microwave FETs; Microwave devices; Signal generators; Time measurement; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.895093

Filename

895093