Effect of Distortion in a Vibrational Potential Surface on Transport Through a Molecular Transistor

Author

Dong, Bing ; Lei, X.L. ; Horing, N. J M

Author_Institution

Dept. of Phys., Shanghai Jiaotong Univ., Shanghai, China

Volume

10

Issue

3

fYear

2010

fDate

3/1/2010 12:00:00 AM

Firstpage

384

Lastpage

390

Abstract

We analyze the effect of a pure distortion of nuclear potential on nonequilibrium-vibration-assisted tunneling through a molecular quantum dot with a single level coupled to the vibrational mode. In this study, we employ rate equations to examine the current-voltage characteristics and zero-frequency shot noise. We find that distortion induces a strong negative differential conductance (NDC) and a giant Fano factor for an anionic molecule; while a weak NDC and a nearly Poissonian shot noise occur for a neutral molecule. We discuss, in detail, the reasons for these asymmetric transport properties.

Keywords

carbon nanotubes; electric admittance; electron spin polarisation; molecular electronics; quantum dots; semiconductor device models; semiconductor device noise; shot noise; transistors; tunnelling; Poissonian shot noise; anionic molecule; current-voltage characteristics; giant Fano factor; molecular quantum dot; molecular transistor; negative differential conductance; neutral molecule; nonequilibrium vibration assisted tunneling; nuclear potential; vibrational potential surface; zero-frequency shot noise; Carbon nanotubes; Coupled mode analysis; Electrons; Nanotechnology; Oscillators; Physics; Poisson equations; Quantum dots; Tunneling; Vibrations; Giant Fano factor; negative differential conductance (NDC); vibration-assisted tunneling;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2009.2037354

Filename

5419272