Nitridation of silicon-dioxide films grown on 6H silicon carbide

Author

Dimitrijev, Sima ; Li, Hui-feng ; Harrison, H.Barry ; Sweatman, Denis

Author_Institution

Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia

Volume

18

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

175

Lastpage

177

Abstract

This letter addresses the question of why it is possible to grow high-quality oxide films on N-type but not on P-type SiC. It provides results which indicate that the oxide/SiC interface would be inferior to the oxide/Si interface for both N-type and P-type SiC, if it were not for the beneficial effects of nitrogen incorporation. The letter presents, for the first time, results on nitridation of thermally grown oxides in NO and N/sub 2/O. The results demonstrate that the oxides grown on P-type can be improved by NO annealing, but not by N/sub 2/O annealing.

Keywords

MOS capacitors; annealing; interface states; nitridation; silicon compounds; 6H SiC; MOS capacitors; N incorporation; N-type SiC; N/sub 2/O; N/sub 2/O annealing; NO; NO annealing; P-type SiC; SiC; SiO/sub 2/ films; SiO/sub 2/-SiC; SiON-SiC; high-quality oxide film growth; nitridation; oxide/SiC interface; thermally grown oxides; Aluminum; Annealing; Lead compounds; MOS capacitors; Nitrogen; Oxidation; Semiconductor films; Silicon carbide; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.568752

Filename

568752