The electrostatic charging damage on the characteristics and reliability of polysilicon thin-film transistors during plasma hydrogenation

Author

Lee, Kan-Yuan ; Fang, Yean-Kuen ; Chen, Chii-Wen ; Huang, K.C. ; Liang, Mong-Song ; Wuu, S.G.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

18

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

187

Lastpage

189

Abstract

In this letter, the impacts of electrostatic charging damage on the characteristics and gate oxide integrity of polysilicon thin-film transistors (TFT´s) during plasma hydrogenation were investigated. Hydrogen atoms can passivate trap states in the polysilicon channel, however, plasma processing induced the effect of electrostatic charging damages the gate oxide and the oxide/channel interface. The passivating effect of hydrogen atoms is hence antagonized by the generated interface states. TFT´s with different area of antennas were used to study the damages caused by electrostatic field.

Keywords

elemental semiconductors; interface states; passivation; semiconductor device reliability; silicon; surface charging; thin film transistors; Si:H; antenna area; electrostatic charging damage; gate oxide integrity; interface states; passivation; plasma hydrogenation; polysilicon thin-film transistor; reliability; trap states; Electrodes; Electrostatics; Hydrogen; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma properties; Plasma sources; Silicon; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.568757

Filename

568757